Effect of Prior C, Si and Sn Implantation on the Etch Rate of CVD Diamond
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Leech, P W; Perova, T; Moore, R A; Reeves, G K; Holland, A S; Ridgway, Mark C
Description
Diamond films were implanted with C+, Si+ or Sn+ ions at multiple energies in order to generate a uniform layer of implantation-induced disorder. The implant energies of 60, 180, 330 and 525 keV for C+ ions, 200, 500 and 950 keV for Si+ ions and 750 and 2000 keV for Sn+ ions were selected to give an approximately constant vacancy concentration at depths over the range ∼ 0-0.5 μm. An analysis of the C+ implanted surfaces by Raman spectroscopy has shown an increase in non-diamond or sp2-bonded...[Show more]
dc.contributor.author | Leech, P W | |
---|---|---|
dc.contributor.author | Perova, T | |
dc.contributor.author | Moore, R A | |
dc.contributor.author | Reeves, G K | |
dc.contributor.author | Holland, A S | |
dc.contributor.author | Ridgway, Mark C | |
dc.date.accessioned | 2015-12-13T23:03:47Z | |
dc.identifier.issn | 0925-9635 | |
dc.identifier.uri | http://hdl.handle.net/1885/85082 | |
dc.description.abstract | Diamond films were implanted with C+, Si+ or Sn+ ions at multiple energies in order to generate a uniform layer of implantation-induced disorder. The implant energies of 60, 180, 330 and 525 keV for C+ ions, 200, 500 and 950 keV for Si+ ions and 750 and 2000 keV for Sn+ ions were selected to give an approximately constant vacancy concentration at depths over the range ∼ 0-0.5 μm. An analysis of the C+ implanted surfaces by Raman spectroscopy has shown an increase in non-diamond or sp2-bonded carbon at doses in the range 5 × 1013 to 5 × 1015 cm- 2. In comparison, a completely non-diamond structure was evident after implantation with either Si+ ions at a dose of 5 × 1015 ions/cm2 or Sn+ ions at ≥ 5 × 1014 cm- 2. For a given dose, the etch rate of the diamond film was shown to increase with the mass of the implanted species in the order of C+, Si+ and Sn+. For a given implant species, the etch rate increased with the implant dose and the ion-induced vacancy concentration. The etch rate of the implanted diamond in various gases decreased in the order of O2, CF4/O2 and CHF3/O2 plasmas. | |
dc.publisher | Elsevier | |
dc.source | Diamond and Related Materials | |
dc.subject | Keywords: Chemical vapor deposition; Diamond films; Ion implantation; Plasmas; Raman spectroscopy; Reactive ion etching; Diamond structures; Implant energies; Vacancy concentration; Diamonds Diamond; Ion implantation; Reactive ion etch | |
dc.title | Effect of Prior C, Si and Sn Implantation on the Etch Rate of CVD Diamond | |
dc.type | Journal article | |
local.description.notes | Imported from ARIES | |
local.description.refereed | Yes | |
local.identifier.citationvolume | 15 | |
dc.date.issued | 2006 | |
local.identifier.absfor | 020406 - Surfaces and Structural Properties of Condensed Matter | |
local.identifier.ariespublication | MigratedxPub13286 | |
local.type.status | Published Version | |
local.contributor.affiliation | Leech, P W, CSIRO | |
local.contributor.affiliation | Perova, T, University of Dublin | |
local.contributor.affiliation | Moore, R A, University of Dublin | |
local.contributor.affiliation | Reeves, G K, RMIT University | |
local.contributor.affiliation | Holland, A S, RMIT University | |
local.contributor.affiliation | Ridgway, Mark C, College of Physical and Mathematical Sciences, ANU | |
local.description.embargo | 2037-12-31 | |
local.bibliographicCitation.startpage | 1266 | |
local.bibliographicCitation.lastpage | 1270 | |
local.identifier.doi | 10.1016/j.diamond.2005.09.034 | |
dc.date.updated | 2015-12-12T07:51:15Z | |
local.identifier.scopusID | 2-s2.0-33746587399 | |
Collections | ANU Research Publications |
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