Leech, P W; Perova, T; Moore, R A; Reeves, G K; Holland, A S; Ridgway, Mark C
Diamond films were implanted with C+, Si+ or Sn+ ions at multiple energies in order to generate a uniform layer of implantation-induced disorder. The implant energies of 60, 180, 330 and 525 keV for C+ ions, 200, 500 and 950 keV for Si+ ions and 750 and 2000 keV for Sn+ ions were selected to give an approximately constant vacancy concentration at depths over the range ∼ 0-0.5 μm. An analysis of the C+ implanted surfaces by Raman spectroscopy has shown an increase in non-diamond or sp2-bonded...[Show more]
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