Rapid Amorphization in In x Ga 1-x As Alloys at Temperatures between 15 K and 300 K
The amorphization kinetics of In0.53Ga0.47As and In0.20Ga0.80As alloys has been investigated in comparison to its binary extremes as a function of the Ge ion fluence at room temperature and 15 K. The irradiated samples were analysed by means of Rutherford backscattering-channeling spectroscopy using an in situ technique in case of the 15 K experiments. Contrary to the AlxGa1-xAs alloys, the system InxGa1-xAs does not exhibit amorphization kinetics intermediate between those of its two binary...[Show more]
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|Source:||Nuclear Instruments and Methods in Physics Research: Section B|
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