Skip navigation
Skip navigation

Atomic-scale Structure of Irradiated GaN compared to Amorphised GaP and GaAs

Ridgway, Mark C; Everett, Sarah; Glover, Christopher; Kluth, Susan; Kluth, Patrick; Johannessen, Bernt; Hussain, Zohair; Llewellyn, David; Foran, Garry J; Azevedo, G de M


We have compared the atomic-scale structure of ion irradiated GaN to that of amorphised GaP and GaAs. While continuous and homogenous amorphised layers were easily achieved in GaP and GaAs, ion irradiation of GaN yielded both structural and chemical inhomogeneities. Transmission electron microscopy revealed GaN crystallites and N2 bubbles were interspersed within an amorphous GaN matrix. The crystallite orientation was random relative to the unirradiated epitaxial structure, suggesting their...[Show more]

CollectionsANU Research Publications
Date published: 2006
Type: Journal article
Source: Nuclear Instruments and Methods in Physics Research: Section B
DOI: 10.1016/j.nimb.2006.04.125


File Description SizeFormat Image
01_Ridgway_Atomic-scale_Structure_of_2006.pdf215.57 kBAdobe PDF    Request a copy

Items in Open Research are protected by copyright, with all rights reserved, unless otherwise indicated.

Updated:  22 January 2019/ Responsible Officer:  University Librarian/ Page Contact:  Library Systems & Web Coordinator