Ridgway, Mark C; Everett, Sarah; Glover, Christopher; Kluth, Susan; Kluth, Patrick; Johannessen, Bernt; Hussain, Zohair; Llewellyn, David; Foran, Garry J; Azevedo, G de M
We have compared the atomic-scale structure of ion irradiated GaN to that of amorphised GaP and GaAs. While continuous and homogenous amorphised layers were easily achieved in GaP and GaAs, ion irradiation of GaN yielded both structural and chemical inhomogeneities. Transmission electron microscopy revealed GaN crystallites and N2 bubbles were interspersed within an amorphous GaN matrix. The crystallite orientation was random relative to the unirradiated epitaxial structure, suggesting their...[Show more]
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