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Atomic-scale Structure of Irradiated GaN compared to Amorphised GaP and GaAs

Ridgway, Mark C; Everett, Sarah; Glover, Christopher; Kluth, Susan; Kluth, Patrick; Johannessen, Bernt; Hussain, Zohair; Llewellyn, David; Foran, Garry J; Azevedo, G de M

Description

We have compared the atomic-scale structure of ion irradiated GaN to that of amorphised GaP and GaAs. While continuous and homogenous amorphised layers were easily achieved in GaP and GaAs, ion irradiation of GaN yielded both structural and chemical inhomogeneities. Transmission electron microscopy revealed GaN crystallites and N2 bubbles were interspersed within an amorphous GaN matrix. The crystallite orientation was random relative to the unirradiated epitaxial structure, suggesting their...[Show more]

CollectionsANU Research Publications
Date published: 2006
Type: Journal article
URI: http://hdl.handle.net/1885/85060
Source: Nuclear Instruments and Methods in Physics Research: Section B
DOI: 10.1016/j.nimb.2006.04.125

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