Comparison of InAs Quantum Dots Grown on GaInAsP and InP
We report on the growth of InAs quantum dots (QDs) on GaInAsP and InP buffers by metal-organic chemical vapour deposition on InP(100) substrates. Indium segregation and the As-P exchange reaction affect the QD nucleation and composition. The As-P exchange reaction has a more pronounced effect on the QDs grown on the InP buffer than on those grown on the GaInAsP buffer. A very thin (0.6 nm) GaAs interlayer grown between the buffer layer and the InAs QD layer consumes segregated indium and...[Show more]
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