Skip navigation
Skip navigation

Comparison of InAs Quantum Dots Grown on GaInAsP and InP

Barik, Satyanarayan; Tan, Hoe Hark; Jagadish, Chennupati

Description

We report on the growth of InAs quantum dots (QDs) on GaInAsP and InP buffers by metal-organic chemical vapour deposition on InP(100) substrates. Indium segregation and the As-P exchange reaction affect the QD nucleation and composition. The As-P exchange reaction has a more pronounced effect on the QDs grown on the InP buffer than on those grown on the GaInAsP buffer. A very thin (0.6 nm) GaAs interlayer grown between the buffer layer and the InAs QD layer consumes segregated indium and...[Show more]

CollectionsANU Research Publications
Date published: 2006
Type: Journal article
URI: http://hdl.handle.net/1885/85052
Source: Nanotechnology
DOI: 10.1088/0957-4484/17/8/010

Download

File Description SizeFormat Image
01_Barik_Comparison_of_InAs_Quantum_2006.pdf575.85 kBAdobe PDF    Request a copy


Items in Open Research are protected by copyright, with all rights reserved, unless otherwise indicated.

Updated:  20 July 2017/ Responsible Officer:  University Librarian/ Page Contact:  Library Systems & Web Coordinator