Skip navigation
Skip navigation

Scanning Ion Deep Level Transient Spectroscopy: I. Theory

Laird, J S; Jagadish, Chennupati; Jamieson, David Norman; Legge, G J F


Theoretical aspects of a new technique for the MeV ion microbeam are described in detail for the first time. The basis of the technique, termed scanning ion deep level transient spectroscopy (SIDLTS), is the imaging of defect distributions within semiconductor devices. The principles of SIDLTS are similar to those behind other deep level transient spectroscopy (DLTS) techniques with the main difference stemming from the injection of carriers into traps using the localized energy-loss of a...[Show more]

CollectionsANU Research Publications
Date published: 2006
Type: Journal article
Source: Journal of Physics D: Applied Physics
DOI: 10.1088/0022-3727/39/7/003


File Description SizeFormat Image
01_Laird_Scanning_Ion_Deep_Level_2006.pdf1.13 MBAdobe PDF    Request a copy

Items in Open Research are protected by copyright, with all rights reserved, unless otherwise indicated.

Updated:  22 January 2019/ Responsible Officer:  University Librarian/ Page Contact:  Library Systems & Web Coordinator