Scanning Ion Deep Level Transient Spectroscopy: I. Theory
Theoretical aspects of a new technique for the MeV ion microbeam are described in detail for the first time. The basis of the technique, termed scanning ion deep level transient spectroscopy (SIDLTS), is the imaging of defect distributions within semiconductor devices. The principles of SIDLTS are similar to those behind other deep level transient spectroscopy (DLTS) techniques with the main difference stemming from the injection of carriers into traps using the localized energy-loss of a...[Show more]
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|Source:||Journal of Physics D: Applied Physics|
|01_Laird_Scanning_Ion_Deep_Level_2006.pdf||1.13 MB||Adobe PDF||Request a copy|
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