Skip navigation
Skip navigation

Scanning Ion Deep Level Transient Spectroscopy: II. Ion Irradiated Au-Si Schottky Junctions

Laird, J S; Jagadish, Chennupati; Jamieson, David Norman; Legge, G J F

Description

Here we introduce a new technique called scanning ion deep level transient spectroscopy (SIDLTS) for the spatial analysis of electrically active defects in devices. In the first part of this paper, a simple theory behind SIDLTS was introduced and factors

CollectionsANU Research Publications
Date published: 2006
Type: Journal article
URI: http://hdl.handle.net/1885/85050
Source: Journal of Physics D: Applied Physics
DOI: 10.1088/0022-3727/39/7/004

Download

File Description SizeFormat Image
01_Laird_Scanning_Ion_Deep_Level_2006.pdf1.54 MBAdobe PDF    Request a copy


Items in Open Research are protected by copyright, with all rights reserved, unless otherwise indicated.

Updated:  27 November 2018/ Responsible Officer:  University Librarian/ Page Contact:  Library Systems & Web Coordinator