Scanning Ion Deep Level Transient Spectroscopy: II. Ion Irradiated Au-Si Schottky Junctions
Here we introduce a new technique called scanning ion deep level transient spectroscopy (SIDLTS) for the spatial analysis of electrically active defects in devices. In the first part of this paper, a simple theory behind SIDLTS was introduced and factors
|Collections||ANU Research Publications|
|Source:||Journal of Physics D: Applied Physics|
|01_Laird_Scanning_Ion_Deep_Level_2006.pdf||1.54 MB||Adobe PDF||Request a copy|
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