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Scanning Ion Deep Level Transient Spectroscopy: II. Ion Irradiated Au-Si Schottky Junctions

Laird, J S; Jagadish, Chennupati; Jamieson, David Norman; Legge, G J F


Here we introduce a new technique called scanning ion deep level transient spectroscopy (SIDLTS) for the spatial analysis of electrically active defects in devices. In the first part of this paper, a simple theory behind SIDLTS was introduced and factors

CollectionsANU Research Publications
Date published: 2006
Type: Journal article
Source: Journal of Physics D: Applied Physics
DOI: 10.1088/0022-3727/39/7/004


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