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Annealing of Ion-implanted SiC by Laser-pulse-exposure-generated Shock-waves

Mulpuri, K B; Qadri, S B; Grun, J; Manka, C K; Ridgway, Mark C

Description

Athermal annealing in phosphorus, boron, and aluminum/boron implanted 4H-SiC is explored by launching mechanical shock waves, induced by exposure to a laser pulse. Annealing is observed in a 3.2 mm outer diameter donut-shaped area surrounding the laser exposed spot. The minimum sheet-resistance within this area in phosphorus-implanted sample is close to the thermally annealed value of 400 Ω/□. Unlike thermal annealing, shock annealing did not cause any redistribution of the implant, including...[Show more]

CollectionsANU Research Publications
Date published: 2006
Type: Journal article
URI: http://hdl.handle.net/1885/85044
Source: Solid-State Electronics
DOI: 10.1016/j.sse.2006.04.019

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