Annealing of Ion-implanted SiC by Laser-pulse-exposure-generated Shock-waves
Athermal annealing in phosphorus, boron, and aluminum/boron implanted 4H-SiC is explored by launching mechanical shock waves, induced by exposure to a laser pulse. Annealing is observed in a 3.2 mm outer diameter donut-shaped area surrounding the laser exposed spot. The minimum sheet-resistance within this area in phosphorus-implanted sample is close to the thermally annealed value of 400 Ω/□. Unlike thermal annealing, shock annealing did not cause any redistribution of the implant, including...[Show more]
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