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Temperature and frequency characterization of InAs nanowire and HfO2 interface using capacitance-voltage method

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Astromskas, Gvidas; Storm, Kristian; Caroff, Philippe; Borgström, Magnus; Lind, Erik; Wernersson, Lars-Erik

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InAs/HfO2 nanowire capacitors using capacitance-voltage (CV) measurements are investigated in the range of 10 kHz to 10 MHz. The capacitors are based on vertical nanowire arrays that are coated with an 8 nm-thick HfO2 layer by atomic layer deposition. CV

dc.contributor.authorAstromskas, Gvidas
dc.contributor.authorStorm, Kristian
dc.contributor.authorCaroff, Philippe
dc.contributor.authorBorgström, Magnus
dc.contributor.authorLind, Erik
dc.contributor.authorWernersson, Lars-Erik
dc.date.accessioned2015-12-13T23:01:39Z
dc.identifier.issn0167-9317
dc.identifier.urihttp://hdl.handle.net/1885/84516
dc.description.abstractInAs/HfO2 nanowire capacitors using capacitance-voltage (CV) measurements are investigated in the range of 10 kHz to 10 MHz. The capacitors are based on vertical nanowire arrays that are coated with an 8 nm-thick HfO2 layer by atomic layer deposition. CV
dc.publisherElsevier
dc.sourceMicroelectronic Engineering
dc.subjectKeywords: Border traps; C-V characteristic; Capacitance voltage; Capacitance-voltage method; Dopant precursors; Doped sample; Doping levels; Frequency characterization; Frequency dispersion; III/V; InAs; n-Type doping; Nanowire arrays; Nanowire surface; Temperature Capacitance-voltage; III/V; InAs; Nanowire doping; Vertical wrap gate
dc.titleTemperature and frequency characterization of InAs nanowire and HfO2 interface using capacitance-voltage method
dc.typeJournal article
local.description.notesImported from ARIES
local.identifier.citationvolume88
dc.date.issued2011
local.identifier.absfor100706 - Nanofabrication, Growth and Self Assembly
local.identifier.absfor020406 - Surfaces and Structural Properties of Condensed Matter
local.identifier.ariespublicationf5625xPUB12798
local.type.statusPublished Version
local.contributor.affiliationAstromskas, Gvidas, Lund University
local.contributor.affiliationStorm, Kristian, Lund University
local.contributor.affiliationCaroff, Philippe, College of Physical and Mathematical Sciences, ANU
local.contributor.affiliationBorgström, Magnus, Lund University
local.contributor.affiliationLind, Erik, Lund University
local.contributor.affiliationWernersson, Lars-Erik, Lund University
local.description.embargo2037-12-31
local.bibliographicCitation.issue4
local.bibliographicCitation.startpage444
local.bibliographicCitation.lastpage447
local.identifier.doi10.1016/j.mee.2010.08.010
dc.date.updated2016-02-24T08:42:38Z
local.identifier.scopusID2-s2.0-79751524891
CollectionsANU Research Publications

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