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Temperature and frequency characterization of InAs nanowire and HfO2 interface using capacitance-voltage method

Astromskas, Gvidas; Storm, Kristian; Caroff, Philippe; Borgström, Magnus; Lind, Erik; Wernersson, Lars-Erik

Description

InAs/HfO2 nanowire capacitors using capacitance-voltage (CV) measurements are investigated in the range of 10 kHz to 10 MHz. The capacitors are based on vertical nanowire arrays that are coated with an 8 nm-thick HfO2 layer by atomic layer deposition. CV

CollectionsANU Research Publications
Date published: 2011
Type: Journal article
URI: http://hdl.handle.net/1885/84516
Source: Microelectronic Engineering
DOI: 10.1016/j.mee.2010.08.010

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