Growth of GaAs/InAs Vertical Nanowires on GaAs (111)B by Metalorganic Chemical Vapor Deposition
The growth mechanism and properties of GaAs/InAs nanowires prepared by metalorganic chemical vapor deposition are investigated. Vertical InAs nanowires on GaAs (111)B substrates are successfully grown despite the large lattice mismatch (-7.2%). The crystallographic perfection of InAs nanowires is confirmed by hexagonal or triangular cross section. An interesting L-shaping of GaAs/InAs heterostructure nanowire which could be useful for novel device application is observed.
|Collections||ANU Research Publications|
|Source:||2005 IEEE LEOS Annual Meeting Conference Proceedings|