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Growth of GaAs/InAs Vertical Nanowires on GaAs (111)B by Metalorganic Chemical Vapor Deposition

Kim, Yong; Joyce, Hannah J; Gao, Qiang; Jagadish, Chennupati; Tan, Hark Hoe


The growth mechanism and properties of GaAs/InAs nanowires prepared by metalorganic chemical vapor deposition are investigated. Vertical InAs nanowires on GaAs (111)B substrates are successfully grown despite the large lattice mismatch (-7.2%). The crystallographic perfection of InAs nanowires is confirmed by hexagonal or triangular cross section. An interesting L-shaping of GaAs/InAs heterostructure nanowire which could be useful for novel device application is observed.

CollectionsANU Research Publications
Date published: 2005
Type: Conference paper
Source: 2005 IEEE LEOS Annual Meeting Conference Proceedings
DOI: 10.1109/LEOS.2005.1548075


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