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Towards p-type Doping of ZnO by Ion Implantation

Coleman, Victoria A; Tan, Hoe Hark; Jagadish, Chennupati; Kucheyev, Sergei O; Zou, Jin; Phillips, Matthew R

Description

Zinc oxide is a very attractive material for a range of optoelectronic devices including blue light-emitting diodes and laser diodes. Though n-type doping has been successfully achieved, p-type doing of ZnO is still a challenge that must be overcome before p-n junction devices can be realized. Ion implantation is widely used in the microelectronics industry for selective area doping and device isolation. Understanding damage accumulation and recrystallization processes is important for...[Show more]

CollectionsANU Research Publications
Date published: 2005
Type: Conference paper
URI: http://hdl.handle.net/1885/84357
Source: 2005 IEEE LEOS Annual Meeting Conference Proceedings

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