Towards p-type Doping of ZnO by Ion Implantation
Zinc oxide is a very attractive material for a range of optoelectronic devices including blue light-emitting diodes and laser diodes. Though n-type doping has been successfully achieved, p-type doing of ZnO is still a challenge that must be overcome before p-n junction devices can be realized. Ion implantation is widely used in the microelectronics industry for selective area doping and device isolation. Understanding damage accumulation and recrystallization processes is important for...[Show more]
|Collections||ANU Research Publications|
|Source:||2005 IEEE LEOS Annual Meeting Conference Proceedings|
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