Movpe growth and structural characterization of extremely lattice-mismatched InP-InSb nanowire heterostructures
We present a growth study and structural characterization of InP-InSb nanowire heterostructures. In contrast to planar epitaxy, this heterostructure can be realized in nanowires without the formation of dislocations, despite an extreme lattice-mismatch (10.4%). We obtain high crystal quality in the InSb nanowires, confirmed by a narrow 111 reflection peak measured by XRD. Additionally, the diameter dependence of the nanowire growth rate was investigated. An original competition between surface...[Show more]
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|Source:||Conference Proceedings - International Conference on Indium Phosphide and Related Materials|
|01_Borg_Movpe_growth_and_structural_2009.pdf||1.88 MB||Adobe PDF||Request a copy|
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