III-V compound semiconductor nanowires
InP and GaAs based nanowires were grown epitaxially on InP or GaAs (111)B substrates by metalorganic chemical vapor deposition via vapor-liquid-solid (VLS) mechanism. In this report, I will give an overview of nanowire research activities in our group. In particular, the effects of growth parameters for InP and GaAs nanowires on the crystal quality have been studied in detail. We demonstrated the ability to obtain defect-free GaAs nanowires and control the crystal structure of InP nanowires,...[Show more]
|Collections||ANU Research Publications|
|Source:||2009 9th IEEE Conference on Nanotechnology, IEEE NANO 2009|
|01_Paiman_III-V_compound_semiconductor_2009.pdf||286.57 kB||Adobe PDF||Request a copy|
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