Epitaxy of III-V semiconductor nanowires towards optoelectronic devices
GaAs and InP based nanowires were grown epitaxially on GaAs or InP (111)B substrates by MOCVD via VLS mechanism. In this paper, I will give an overview of nanowire research activities in our group.
|Collections||ANU Research Publications|
|Source:||2009 14th OptoElectronics and Communications Conference, OECC 2009|
|01_Gao_Epitaxy_of_III-V_semiconductor_2009.pdf||22.35 kB||Adobe PDF||Request a copy|
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