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Epitaxy of III-V semiconductor nanowires towards optoelectronic devices

Gao, Qiang; Joyce, Hannah J; Paiman, Suriati; Kim, Yong; Smith, Leigh M; Jackson, Howard E; Yarrison-Rice, Jan M; Zhang, Xin; Zou, Jin; Jagadish, Chennupati; Tan, Hark Hoe

Description

GaAs and InP based nanowires were grown epitaxially on GaAs or InP (111)B substrates by MOCVD via VLS mechanism. In this paper, I will give an overview of nanowire research activities in our group.

CollectionsANU Research Publications
Date published: 2009
Type: Conference paper
URI: http://hdl.handle.net/1885/84099
Source: 2009 14th OptoElectronics and Communications Conference, OECC 2009
DOI: 10.1109/OECC.2009.5219756

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