Study of intermixing mechanism in AlInGaAs/InGaAs quantum well
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Du, Si; Fu, Lan; Jagadish, Chennupati; Tan, Hark Hoe
Description
In this work, controlled band gap modifications in AlInGaAs/InGaAs quantum well structures using different encapsulating layers are studied and compared. X-ray photoelectron spectroscopy was used to investigate the interfacial reaction between the quantum well structure and dielectric capping layer.
Collections | ANU Research Publications |
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Date published: | 2010 |
Type: | Conference paper |
URI: | http://hdl.handle.net/1885/83993 |
Source: | Conference on Optoelectronic and Microelectronic Materials and Devices, Proceedings, COMMAD |
DOI: | 10.1109/COMMAD.2010.5699772 |
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01_Du_Study_of_intermixing_mechanism_2010.pdf | 370.69 kB | Adobe PDF | Request a copy |
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