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Study of intermixing mechanism in AlInGaAs/InGaAs quantum well

Du, Si; Fu, Lan; Tan, Hoe Hark; Jagadish, Chennupati

Description

In this work, controlled band gap modifications in AlInGaAs/InGaAs quantum well structures using different encapsulating layers are studied and compared. X-ray photoelectron spectroscopy was used to investigate the interfacial reaction between the quantum well structure and dielectric capping layer.

CollectionsANU Research Publications
Date published: 2010
Type: Conference paper
URI: http://hdl.handle.net/1885/83993
Source: Conference on Optoelectronic and Microelectronic Materials and Devices, Proceedings, COMMAD
DOI: 10.1109/COMMAD.2010.5699772

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