Study of intermixing mechanism in AlInGaAs/InGaAs quantum well
In this work, controlled band gap modifications in AlInGaAs/InGaAs quantum well structures using different encapsulating layers are studied and compared. X-ray photoelectron spectroscopy was used to investigate the interfacial reaction between the quantum well structure and dielectric capping layer.
|Collections||ANU Research Publications|
|Source:||Conference on Optoelectronic and Microelectronic Materials and Devices, Proceedings, COMMAD|
|01_Du_Study_of_intermixing_mechanism_2010.pdf||370.69 kB||Adobe PDF||Request a copy|