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Mid-infrared InAsSb quantum dots with high emission efficiency

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Lei, Wen; Jagadish, Chennupati; Tan, Hark Hoe

Description

Mid-infrared emission with high efficiency was achieved for InAsSb quantum dots by using InGaAsSb sandwich layers and InP carrier blocking layers. As a result of reduced quantum confinement and lattice mismatch around InAsSb quantum dots caused by InGaAsSb layers, an emission of 2.1 μm was obtained for the sample with In0.53Ga0.47As0.25Sb0.75 layers. The emission signal was observed up to 330 K by using InP carrier blocking layers to suppress the thermal escape of carriers.

CollectionsANU Research Publications
Date published: 2010
Type: Conference paper
URI: http://hdl.handle.net/1885/83809
Source: Conference on Optoelectronic and Microelectronic Materials and Devices, Proceedings, COMMAD
DOI: 10.1109/COMMAD.2010.5699782

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