InP/InGaAs coreshell nanowire heterostructures: Growth and characterisation
We report the growth of InP/InGaAs core-shell nanowires by metal organic chemical vapour deposition (MOCVD). The grown nanowires are distributed uniformly and are vertical to the substrate. The coreshell nanowires have been structurally characterised by scanning electron microscopy and transmission electron microscopy.
|Collections||ANU Research Publications|
|Source:||Conference on Optoelectronic and Microelectronic Materials and Devices, Proceedings, COMMAD|
|01_Ramesh_InP/InGaAs_coreshell_nanowire_2010.pdf||615.38 kB||Adobe PDF||Request a copy|
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