Hafnium-related photoluminescence in single crystal silicon
A new photoluminescence (PL) band in the energy range of 700 meV to 950 meV associated with hafnium implanted in silicon is reported. A shift in the position of photoluminescence peaks observed on the samples implanted with two different isotopes of Hf confirms the Hf-related origin of the observed photoluminescence band. Activation of the Hf-optical centers requires a 1000°C anneal step. The intensity of the PL lines depends on the cooling conditions. The spectrum consists of five peaks in the...[Show more]
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