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Electronically Stimulated Degradation of Crystalline Silicon Solar Cells

Schmidt, Jan; Bothe, Karsten; MacDonald, Daniel; Adey, J; Jones, R; Palmer, D W

Description

Carrier lifetime degradation in crystalline silicon solar cells under illumination with white light is a frequently observed phenomenon. Two main causes of such degradation effects have been identified in the past, both of them being electronically driven and both related to the most common acceptor element, boron, in silicon: (i) the dissociation of iron-boron pairs and (ii) the formation of recombination-active boron-oxygen complexes. While the first mechanism is particularly relevant in...[Show more]

dc.contributor.authorSchmidt, Jan
dc.contributor.authorBothe, Karsten
dc.contributor.authorMacDonald, Daniel
dc.contributor.authorAdey, J
dc.contributor.authorJones, R
dc.contributor.authorPalmer, D W
dc.coverage.spatialSan Francisco USA
dc.date.accessioned2015-12-13T22:59:15Z
dc.date.available2015-12-13T22:59:15Z
dc.date.createdMarch 28 2005
dc.identifier.isbn1558998195
dc.identifier.urihttp://hdl.handle.net/1885/83688
dc.description.abstractCarrier lifetime degradation in crystalline silicon solar cells under illumination with white light is a frequently observed phenomenon. Two main causes of such degradation effects have been identified in the past, both of them being electronically driven and both related to the most common acceptor element, boron, in silicon: (i) the dissociation of iron-boron pairs and (ii) the formation of recombination-active boron-oxygen complexes. While the first mechanism is particularly relevant in metal-contaminated solar-grade multicrystalline silicon materials, the latter process is important in monocrystalline Czochralski-grown silicon, rich in oxygen. This paper starts with a short review of the characteristic features of the two processes. We then briefly address the effect of iron-boron dissociation on solar cell parameters. Regarding the boron-oxygen-related degradation, the current status of the physical understanding of the defect formation process and the defect structure are presented. Finally, we discuss different strategies for effectively avoiding the degradation.
dc.publisherMaterials Research Society
dc.relation.ispartofseriesMaterials Research Society Meeting Spring 2005
dc.sourceRare-Earth Doping for Optoelectronic Applications
dc.subjectKeywords: Crystal growth from melt; Degradation; Dissociation; Silicon; Solar cells; Boron-oxygen complexes; Crystalline solar cells; Defect formation process; Crystalline materials
dc.titleElectronically Stimulated Degradation of Crystalline Silicon Solar Cells
dc.typeConference paper
local.description.notesImported from ARIES
local.description.refereedNo
dc.date.issued2005
local.identifier.absfor090699 - Electrical and Electronic Engineering not elsewhere classified
local.identifier.ariespublicationMigratedxPub11973
local.type.statusPublished Version
local.contributor.affiliationSchmidt, Jan , Institute for Solar Energy Research Hameln (ISFH)
local.contributor.affiliationBothe, Karsten, Institute for Solar Energy Research Hameln (ISFH)
local.contributor.affiliationMacDonald, Daniel, College of Engineering and Computer Science, ANU
local.contributor.affiliationAdey, J, University of Exeter
local.contributor.affiliationJones, R, University of Exeter
local.contributor.affiliationPalmer, D W, University of Exeter
local.bibliographicCitation.startpage1
local.bibliographicCitation.lastpage12
dc.date.updated2015-12-12T07:27:19Z
local.identifier.scopusID2-s2.0-30644476748
CollectionsANU Research Publications

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