Effect of high temperature post-annealing on sidewalls of GaAs NWs grown by MOCVD
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Guo, YaNan; Zou, Jin; Joyce, Hannah J; Gao, Qiang; Jagadish, Chennupati; Tan, Hark Hoe
Description
The sidewall facets of GaAs nanowires (NWs) were studied. It has been found that the sidewalls of GaAs NWs grown at 450 °C are {112} facets. However, the sidewalls of GaAs NWs start to become {110} during the postannealing at 650 °C for 30 min.
Collections | ANU Research Publications |
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Date published: | 2010 |
Type: | Conference paper |
URI: | http://hdl.handle.net/1885/83675 |
Source: | Conference on Optoelectronic and Microelectronic Materials and Devices, Proceedings, COMMAD |
DOI: | 10.1109/COMMAD.2010.5699774 |
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