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Effect of high temperature post-annealing on sidewalls of GaAs NWs grown by MOCVD

Guo, YaNan; Zou, Jin; Joyce, Hannah J; Gao, Qiang; Jagadish, Chennupati; Tan, Hark Hoe

Description

The sidewall facets of GaAs nanowires (NWs) were studied. It has been found that the sidewalls of GaAs NWs grown at 450 °C are {112} facets. However, the sidewalls of GaAs NWs start to become {110} during the postannealing at 650 °C for 30 min.

dc.contributor.authorGuo, YaNan
dc.contributor.authorZou, Jin
dc.contributor.authorJoyce, Hannah J
dc.contributor.authorGao, Qiang
dc.contributor.authorJagadish, Chennupati
dc.contributor.authorTan, Hark Hoe
dc.coverage.spatialCanberra, ACT
dc.date.accessioned2015-12-13T22:59:14Z
dc.date.createdDecember 12-15 2010
dc.identifier.isbn9781424473335
dc.identifier.urihttp://hdl.handle.net/1885/83675
dc.description.abstractThe sidewall facets of GaAs nanowires (NWs) were studied. It has been found that the sidewalls of GaAs NWs grown at 450 °C are {112} facets. However, the sidewalls of GaAs NWs start to become {110} during the postannealing at 650 °C for 30 min.
dc.publisherIEEE
dc.relation.ispartofseries2010 Conference on Optoelectronic and Microelectronic Materials and Devices, COMMAD 2010
dc.sourceConference on Optoelectronic and Microelectronic Materials and Devices, Proceedings, COMMAD
dc.subjectKeywords: GaAs; High temperature; MOCVD; Post annealing; Gallium arsenide; Microelectronics; Nanowires; Semiconducting gallium; Gallium alloys
dc.titleEffect of high temperature post-annealing on sidewalls of GaAs NWs grown by MOCVD
dc.typeConference paper
local.description.notesImported from ARIES
local.description.refereedYes
dc.date.issued2010
local.identifier.absfor020204 - Plasma Physics; Fusion Plasmas; Electrical Discharges
local.identifier.absfor100700 - NANOTECHNOLOGY
local.identifier.absfor100799 - Nanotechnology not elsewhere classified
local.identifier.ariespublicationf5625xPUB11957
local.identifier.ariespublicationU3594520xPUB580
local.type.statusPublished Version
local.contributor.affiliationGuo, YaNan, University of Queensland
local.contributor.affiliationZou, Jin, University of Queensland
local.contributor.affiliationJoyce, Hannah J, College of Physical and Mathematical Sciences, ANU
local.contributor.affiliationGao, Qiang, College of Physical and Mathematical Sciences, ANU
local.contributor.affiliationTan, Hoe Hark, College of Physical and Mathematical Sciences, ANU
local.contributor.affiliationJagadish, Chennupati, College of Physical and Mathematical Sciences, ANU
local.description.embargo2037-12-31
local.bibliographicCitation.startpage51
local.bibliographicCitation.lastpage52
local.identifier.doi10.1109/COMMAD.2010.5699774
local.identifier.absseo970102 - Expanding Knowledge in the Physical Sciences
dc.date.updated2016-02-24T08:39:59Z
local.identifier.scopusID2-s2.0-79951763312
CollectionsANU Research Publications

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