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A comparative study of transistors based on wurtzite and zincblende InAs nanowires

Williams, Marc; Burke, Adam M.; Joyce, Hannah J; Micolich, Adam Paul; Jagadish, Chennupati; Tan, Hark Hoe


We report a comparative study of the electronic properties of nominally identical nanowire field-effect transistor (NW-FET) devices produced using 50 nm diameter InAs nanowires that differ only in phase: ZB on the one hand, and WZ on the other. We find much higher current densities in the ZB NW-FETs, and on/off ratios of up to 100.

CollectionsANU Research Publications
Date published: 2010
Type: Conference paper
Source: Conference on Optoelectronic and Microelectronic Materials and Devices, Proceedings, COMMAD
DOI: 10.1109/COMMAD.2010.5699740


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