A comparative study of transistors based on wurtzite and zincblende InAs nanowires
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Williams, Marc; Burke, Adam M.; Joyce, Hannah J; Micolich, Adam Paul; Jagadish, Chennupati; Tan, Hark Hoe
Description
We report a comparative study of the electronic properties of nominally identical nanowire field-effect transistor (NW-FET) devices produced using 50 nm diameter InAs nanowires that differ only in phase: ZB on the one hand, and WZ on the other. We find much higher current densities in the ZB NW-FETs, and on/off ratios of up to 100.
| Collections | ANU Research Publications |
|---|---|
| Date published: | 2010 |
| Type: | Conference paper |
| URI: | http://hdl.handle.net/1885/83508 |
| Source: | Conference on Optoelectronic and Microelectronic Materials and Devices, Proceedings, COMMAD |
| DOI: | 10.1109/COMMAD.2010.5699740 |
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| File | Description | Size | Format | Image |
|---|---|---|---|---|
| 01_Williams_A_comparative_study_of_2010.pdf | 516.42 kB | Adobe PDF | Request a copy |
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