A comparative study of transistors based on wurtzite and zincblende InAs nanowires
We report a comparative study of the electronic properties of nominally identical nanowire field-effect transistor (NW-FET) devices produced using 50 nm diameter InAs nanowires that differ only in phase: ZB on the one hand, and WZ on the other. We find much higher current densities in the ZB NW-FETs, and on/off ratios of up to 100.
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|Source:||Conference on Optoelectronic and Microelectronic Materials and Devices, Proceedings, COMMAD|
|01_Williams_A_comparative_study_of_2010.pdf||516.42 kB||Adobe PDF||Request a copy|
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