Structure in Amorphous Semiconductors: Extrinsic and Intrinsic
A detailed study of the atomic-scale structure of amorphous semiconductors utilizing Extended X-ray Absorption Fine Structure (EXAFS) spectroscopy is reported. Samples were examined in both extrinsic (preparation specific) and intrinsic (minimum energy) forms. The amorphous elemental semiconductors exhibit structural disorder in the form of both bond-length and bond-angle distortions. As formed, amorphous Ge displays a fabrication-dependent non-Gaussian inter-atomic distance distribution with...[Show more]
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|Source:||Nuclear Instruments and Methods in Physics Research: Section B|
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