Photo-ionisation spectra of single erbium centres by charge sensing with a nano transistor
We show the photo-ionisation of an individual erbium centre in silicon. A single-electron transistor is used as a charge detector to observe the resonant ionization as a function of photon energy. This allows for optical addressing and electrical detection of individual erbium centres with exceptionally narrow line width.
|Collections||ANU Research Publications|
|Source:||Conference on Optoelectronic and Microelectronic Materials and Devices, Proceedings, COMMAD|
|01_Yin_Photo-ionisation_spectra_of_2012.pdf||388.97 kB||Adobe PDF||Request a copy|
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