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Modeling Solid Phase Epitaxial Growth for Patterned Ge Substrates

Darby, B.L.; Yates, B.R.; Kumar, Ashish; Kontos, A.; Elliman, Robert; Jones, K S

Description

Modeling the two-dimensional (2D) solid phase epitaxial growth (SPEG) of amorphized Ge has become important due to the renewed interest in Ge as an alternative material in complementary metal-oxide-semiconductor (CMOS) devices. No one has modeled the two-

CollectionsANU Research Publications
Date published: 2013
Type: Journal article
URI: http://hdl.handle.net/1885/82914
Source: ECS Journal of Solid State Science and Technology
DOI: 10.1149/05009.0753ecst

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