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Behaviour of Natural and Implanted Iron during Annealing of Multicrystalline Silicon Wafers

MacDonald, Daniel; Roth, Thomas; Geerligs, Lambert Johan; Cuevas, Andres

Description

Changes in the concentration of interstitial iron in multicrystalline silicon wafers after high temperature annealing (900°C) have been monitored by carrier lifetime measurements. Two cooling rates were investigated. The first was considered 'fast', mean

CollectionsANU Research Publications
Date published: 2005
Type: Journal article
URI: http://hdl.handle.net/1885/82631
Source: Solid State Phenomena

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