Behaviour of Natural and Implanted Iron during Annealing of Multicrystalline Silicon Wafers
Changes in the concentration of interstitial iron in multicrystalline silicon wafers after high temperature annealing (900°C) have been monitored by carrier lifetime measurements. Two cooling rates were investigated. The first was considered 'fast', mean
|Collections||ANU Research Publications|
|Source:||Solid State Phenomena|
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