Behaviour of Natural and Implanted Iron during Annealing of Multicrystalline Silicon Wafers
MacDonald, Daniel; Roth, Thomas; Geerligs, Lambert Johan; Cuevas, Andres
Description
Changes in the concentration of interstitial iron in multicrystalline silicon wafers after high temperature annealing (900°C) have been monitored by carrier lifetime measurements. Two cooling rates were investigated. The first was considered 'fast', mean
| Collections | ANU Research Publications |
|---|---|
| Date published: | 2005 |
| Type: | Journal article |
| URI: | http://hdl.handle.net/1885/82631 |
| Source: | Solid State Phenomena |
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