Behaviour of Natural and Implanted Iron during Annealing of Multicrystalline Silicon Wafers
MacDonald, Daniel; Roth, Thomas; Geerligs, Lambert Johan; Cuevas, Andres
Description
Changes in the concentration of interstitial iron in multicrystalline silicon wafers after high temperature annealing (900°C) have been monitored by carrier lifetime measurements. Two cooling rates were investigated. The first was considered 'fast', mean
Collections | ANU Research Publications |
---|---|
Date published: | 2005 |
Type: | Journal article |
URI: | http://hdl.handle.net/1885/82631 |
Source: | Solid State Phenomena |
Download
There are no files associated with this item.
Items in Open Research are protected by copyright, with all rights reserved, unless otherwise indicated.
Updated: 19 May 2020/ Responsible Officer: University Librarian/ Page Contact: Library Systems & Web Coordinator