A Novel Silicon Texturization Method Based on Etching Through a Silicon Nitride Mask
We present a new texturing technique applicable to silicon solar cells. The technique is based on the isotropic etching of silicon through a very thin layer of silicon nitride, deposited by low-pressure chemical vapor deposition. Spectrophotometry measurements show that the resulting surface texture displays low reflectivity after encapsulation behind glass, and nearly ideal light-trapping behaviour. The surfaces can also be well passivated using standard passivation techniques. Emitter dark...[Show more]
|Collections||ANU Research Publications|
|Source:||Progress in Photovoltaics: Research and Applications|
|01_Weber_A_Novel_Silicon_Texturization_2005.pdf||107.29 kB||Adobe PDF||Request a copy|
Items in Open Research are protected by copyright, with all rights reserved, unless otherwise indicated.