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Reliable ERD analysis of group-III nitrides despite severe nitrogen depletion

Shrestha, Santosh K; Butcher, Kenneth Scott A; Wintrebert-Fouquet, Marie; Timmers, Heiko

Description

ERD analysis of different group-III nitride films has been performed using a 200 MeV Au beam. Recoil ions were detected employing a gas ionisation detector with large detection solid angle. The nitrogen depletion in the irradiated film volume has been measured as a function of incident ion fluence. Severe depletion rates have been observed for GaN and InN films, resulting in the eventual loss of all nitrogen, with InN losing nitrogen more than ten times faster than GaN. For GaN a delayed onset...[Show more]

dc.contributor.authorShrestha, Santosh K
dc.contributor.authorButcher, Kenneth Scott A
dc.contributor.authorWintrebert-Fouquet, Marie
dc.contributor.authorTimmers, Heiko
dc.date.accessioned2015-12-13T22:55:29Z
dc.identifier.issn0168-583X
dc.identifier.urihttp://hdl.handle.net/1885/82554
dc.description.abstractERD analysis of different group-III nitride films has been performed using a 200 MeV Au beam. Recoil ions were detected employing a gas ionisation detector with large detection solid angle. The nitrogen depletion in the irradiated film volume has been measured as a function of incident ion fluence. Severe depletion rates have been observed for GaN and InN films, resulting in the eventual loss of all nitrogen, with InN losing nitrogen more than ten times faster than GaN. For GaN a delayed onset of the nitrogen depletion is apparent. A two parameter bulk molecular recombination model describes the nitrogen depletion well and enables reliable extrapolations of the original nitrogen content of GaN and InN films. A refinement of the model may be possible by considering the diffusion of nitrogen radicals.
dc.publisherElsevier
dc.sourceNuclear Instruments and Methods in Physics Research: Section B
dc.subjectKeywords: Gallium nitride; Gas detectors; Indium compounds; Ion beams; Ionization of gases; Nitrogen; Radiation effects; Reliability; Compositional analysis; Elastic recoil analysis; Gallium nitride films; Indium nitride films; Ion beam analysis; Radiation effect i Compositional analysis; Elastic recoil detection; Gallium nitride films; Indium nitride films; Ion beam analysis; Radiation effects in semiconductors
dc.titleReliable ERD analysis of group-III nitrides despite severe nitrogen depletion
dc.typeJournal article
local.description.notesImported from ARIES
local.description.refereedYes
local.identifier.citationvolume219-20
dc.date.issued2004
local.identifier.absfor020201 - Atomic and Molecular Physics
local.identifier.ariespublicationMigratedxPub10806
local.type.statusPublished Version
local.contributor.affiliationShrestha, Santosh K, University of New South Wales, ADFA
local.contributor.affiliationButcher, Kenneth Scott A, Macquarie University
local.contributor.affiliationWintrebert-Fouquet, Marie, Macquarie University
local.contributor.affiliationTimmers, Heiko, College of Physical and Mathematical Sciences, ANU
local.description.embargo2037-12-31
local.bibliographicCitation.startpage686
local.bibliographicCitation.lastpage692
local.identifier.doi10.1016/j.nimb.2004.01.143
dc.date.updated2015-12-11T11:10:50Z
local.identifier.scopusID2-s2.0-2442476064
CollectionsANU Research Publications

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