Core-level photoemission and near-edge x-ray absorption fine-structure studies of GaN surface under low-energy ion bombardment
The compositional changes on GaN surfaces under the low energy Ar ion bombardment were analyzed. The bombarded surfaces were characterized using synchrotron-based high-resolution core-level photoemission measurements and near-edge x-ray absorption fine-structure (NEXAFS) spectroscopy. The uncoordinated Ga nad N atoms at the surface were formed due to the impact of energetic Ar ions which break the Ga-N bond on the GaN surface. It was observed that the low-energy ion bombardment of GaN had...[Show more]
|Collections||ANU Research Publications|
|Source:||Journal of Applied Physics|
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