Ion-Irradiation-Induced Preferential Amorphization of Ge Nanocrystals in Silica
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Ridgway, Mark C; Azevedo, G de M; Elliman, Robert; Glover, Christopher; Llewellyn, David; Miller, R; Wesch, W; Foran, Garry J; Hansen, Jeffrey; Nylandsted-Larsen, A
Description
Extended x-ray absorption fine structure (EXAFS) measurements have been used to characterize the ion-irradiation-induced crystalline-to-amorphous phase transformation in Ge nanocrystals. The atomic-scale structure of Ge nanocrystals in a silica matrix is
| Collections | ANU Research Publications |
|---|---|
| Date published: | 2005 |
| Type: | Journal article |
| URI: | http://hdl.handle.net/1885/82508 |
| Source: | Physical Review B: Condensed Matter and Materials |
| DOI: | 10.1103/PhysRevB.71.094107 |
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| File | Description | Size | Format | Image |
|---|---|---|---|---|
| 01_Ridgway_Ion-Irradiation-Induced_2005.pdf | 116.12 kB | Adobe PDF | Request a copy |
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