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Room-Temperature Preperation of InGaAsN Quantum Dot Lasers Grown by MOCVD

Gao, Qiang; Buda, Manuela; Jagadish, Chennupati; Tan, Hark Hoe


An InGaAsN single-layer quantum dot (QD) laser structure was grown on GaAs substrates by metalorganic chemical vapor deposition (MOCVD). The ridge-waveguide edge emitting laser diodes (LD) were fabricated and characterized. We demonstrate room-temperature operation of InGaAsN QD lasers with an emission wavelength of 1078 nm. Electroluminescence spectra as a function of injection current showed that InGaAsN QD LDs lased from an excited QD state at room temperature. The evidence for QD-related...[Show more]

CollectionsANU Research Publications
Date published: 2005
Type: Journal article
Source: Electrochemical and Solid-State Letters
DOI: 10.1149/1.1848293


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