Ion-Implantation-Induced Extended Defect Formation in (0001) and (1120) 4H-SiC
We study the effect of substrate orientation namely (11 2̄ 0) and (0001) oriented crystals on defect formation in 4H-SiC. The microstructure of the various samples, as-implanted with P and annealed, were studied by Rutherford backscattering spectrometry
|Collections||ANU Research Publications|
|Source:||Physical Review B: Condensed Matter and Materials|
|01_Wong-Leung_Ion-Implantation-Induced_2005.pdf||1.23 MB||Adobe PDF||Request a copy|
Items in Open Research are protected by copyright, with all rights reserved, unless otherwise indicated.