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Ion-Implantation-Induced Extended Defect Formation in (0001) and (1120) 4H-SiC

Wong-Leung, Jennifer; Linnarsson, M K; Svensson, Bengt Gunnar; Cockayne, David John Hugh


We study the effect of substrate orientation namely (11 2̄ 0) and (0001) oriented crystals on defect formation in 4H-SiC. The microstructure of the various samples, as-implanted with P and annealed, were studied by Rutherford backscattering spectrometry

CollectionsANU Research Publications
Date published: 2005
Type: Journal article
Source: Physical Review B: Condensed Matter and Materials
DOI: 10.1103/PhysRevB.71.165210


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