Development of a vertical wrap-gated InAs FET
In this paper, we report on the development of a vertical wrap-gated field-effect transistor based on epitaxially grown InAs nanowires. We discuss some of the important steps involved in the growth and processing, such as nanowire position control, in sit
|Collections||ANU Research Publications|
|Source:||IEEE Transactions on Electron Devices|
|01_Thelander_Development_of_a_vertical_2008.pdf||729.93 kB||Adobe PDF||Request a copy|
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