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Development of a vertical wrap-gated InAs FET

Thelander, Claes; Rehnstedt, Carl; Fröberg, Linus E; Lind, Erik; Martensson, Thomas; Caroff, Philippe; Lowgren, Truls; Ohlsson, B. Jonas; Samuelson, Lars; Wernersson, Lars-Erik

Description

In this paper, we report on the development of a vertical wrap-gated field-effect transistor based on epitaxially grown InAs nanowires. We discuss some of the important steps involved in the growth and processing, such as nanowire position control, in sit

CollectionsANU Research Publications
Date published: 2008
Type: Journal article
URI: http://hdl.handle.net/1885/82436
Source: IEEE Transactions on Electron Devices
DOI: 10.1109/TED.2008.2005151

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