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Characterization of GaSb nanowires grown by MOVPE

Jeppsson, Mattias; Dick, Kimberley A.; Nilsson, H; Skold, Niklas; Wagner, Jakob B; Caroff, Philippe; Wernersson, Lars-Erik


We report the growth and characterization of GaSb nanowires grown by MOVPE. The structural properties of the nanowires are investigated by the means of transmission electron microscopy, X-ray diffraction and single nanowire photoluminescence. The measurements confirm a high material quality in the GaSb nanowires. Also, a back-gated nanowire transistor structure is used to extract values for the polarity and resistivity of the GaSb. Finally, a simple kinetic model is presented to explain the...[Show more]

CollectionsANU Research Publications
Date published: 2008
Type: Journal article
Source: Journal of Crystal Growth
DOI: 10.1016/j.jcrysgro.2008.07.061


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