GaAs/GaSb nanowire heterostructures grown by MOVPE
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Jeppsson, Mattias; Dick, Kimberley A.; Wagner, Jakob B; Caroff, Philippe; Deppert, Knut; Samuelson, Lars; Wernersson, Lars-Erik
Description
We report Au-assisted growth of GaAs/GaSb nanowire heterostructures on GaAs(1 1 1)B-substrates by metal-organic vapor phase epitaxy. The growth is studied at various precursor molar fractions and temperatures, in order to optimize the growth conditions for the GaSb nanowire segment. In contrast to most other III-V nanowire systems, the GaSb nanowire growth is Group V-limited under most conditions. We found that depending on the TMSb molar fraction, the seed particle is either supersaturated...[Show more]
dc.contributor.author | Jeppsson, Mattias | |
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dc.contributor.author | Dick, Kimberley A. | |
dc.contributor.author | Wagner, Jakob B | |
dc.contributor.author | Caroff, Philippe | |
dc.contributor.author | Deppert, Knut | |
dc.contributor.author | Samuelson, Lars | |
dc.contributor.author | Wernersson, Lars-Erik | |
dc.date.accessioned | 2015-12-13T22:54:46Z | |
dc.identifier.issn | 0022-0248 | |
dc.identifier.uri | http://hdl.handle.net/1885/82237 | |
dc.description.abstract | We report Au-assisted growth of GaAs/GaSb nanowire heterostructures on GaAs(1 1 1)B-substrates by metal-organic vapor phase epitaxy. The growth is studied at various precursor molar fractions and temperatures, in order to optimize the growth conditions for the GaSb nanowire segment. In contrast to most other III-V nanowire systems, the GaSb nanowire growth is Group V-limited under most conditions. We found that depending on the TMSb molar fraction, the seed particle is either supersaturated AuGa or AuGa2 during GaSb growth. The high Ga content in the particle gives a characteristic diameter increase between the GaAs and GaSb segment. From TEM and XEDS measurements we conclude that the GaSb nanowire growth occurs along either the AuGa-GaSb or AuGa2-GaSb pseudo-binaries of the Au-Ga-Sb ternary phase diagram. Finally, the GaSb nanowires exhibit untapered radial growth on the {1 1̄ 0} side facets. | |
dc.publisher | Elsevier | |
dc.source | Journal of Crystal Growth | |
dc.subject | Keywords: Crystal growth; Crystals; Ecology; Electric wire; Epitaxial growth; Metallorganic vapor phase epitaxy; Metals; Nanostructured materials; Nanostructures; Nanowires; A1. Nanowires; A3. Heterostructures; A3. Metal-organic vapor phase epitaxy; B1. Antimonides A1. Nanowires; A3. Heterostructures; A3. Metal-organic vapor phase epitaxy; B1. Antimonides; B1. Gallium antimonide | |
dc.title | GaAs/GaSb nanowire heterostructures grown by MOVPE | |
dc.type | Journal article | |
local.description.notes | Imported from ARIES | |
local.identifier.citationvolume | 310 | |
dc.date.issued | 2008 | |
local.identifier.absfor | 020406 - Surfaces and Structural Properties of Condensed Matter | |
local.identifier.absfor | 100706 - Nanofabrication, Growth and Self Assembly | |
local.identifier.ariespublication | f5625xPUB10510 | |
local.type.status | Published Version | |
local.contributor.affiliation | Jeppsson, Mattias, Lund University | |
local.contributor.affiliation | Dick, Kimberley A., Lund University | |
local.contributor.affiliation | Wagner, Jakob B, Lund University | |
local.contributor.affiliation | Caroff, Philippe, College of Physical and Mathematical Sciences, ANU | |
local.contributor.affiliation | Deppert, Knut, Lund University | |
local.contributor.affiliation | Samuelson, Lars, Lund University | |
local.contributor.affiliation | Wernersson, Lars-Erik, Lund University | |
local.description.embargo | 2037-12-31 | |
local.bibliographicCitation.issue | 18 | |
local.bibliographicCitation.startpage | 4115 | |
local.bibliographicCitation.lastpage | 4121 | |
local.identifier.doi | 10.1016/j.jcrysgro.2008.06.066 | |
dc.date.updated | 2015-12-11T11:05:55Z | |
local.identifier.scopusID | 2-s2.0-49749084693 | |
Collections | ANU Research Publications |
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