Skip navigation
Skip navigation

GaAs/GaSb nanowire heterostructures grown by MOVPE

Jeppsson, Mattias; Dick, Kimberley A.; Wagner, Jakob B; Caroff, Philippe; Deppert, Knut; Samuelson, Lars; Wernersson, Lars-Erik


We report Au-assisted growth of GaAs/GaSb nanowire heterostructures on GaAs(1 1 1)B-substrates by metal-organic vapor phase epitaxy. The growth is studied at various precursor molar fractions and temperatures, in order to optimize the growth conditions for the GaSb nanowire segment. In contrast to most other III-V nanowire systems, the GaSb nanowire growth is Group V-limited under most conditions. We found that depending on the TMSb molar fraction, the seed particle is either supersaturated...[Show more]

CollectionsANU Research Publications
Date published: 2008
Type: Journal article
Source: Journal of Crystal Growth
DOI: 10.1016/j.jcrysgro.2008.06.066


File Description SizeFormat Image
01_Jeppsson_GaAs/GaSb_nanowire_2008.pdf532.83 kBAdobe PDF    Request a copy

Items in Open Research are protected by copyright, with all rights reserved, unless otherwise indicated.

Updated:  19 May 2020/ Responsible Officer:  University Librarian/ Page Contact:  Library Systems & Web Coordinator