GaAs/GaSb nanowire heterostructures grown by MOVPE
We report Au-assisted growth of GaAs/GaSb nanowire heterostructures on GaAs(1 1 1)B-substrates by metal-organic vapor phase epitaxy. The growth is studied at various precursor molar fractions and temperatures, in order to optimize the growth conditions for the GaSb nanowire segment. In contrast to most other III-V nanowire systems, the GaSb nanowire growth is Group V-limited under most conditions. We found that depending on the TMSb molar fraction, the seed particle is either supersaturated...[Show more]
|Collections||ANU Research Publications|
|Source:||Journal of Crystal Growth|
|01_Jeppsson_GaAs/GaSb_nanowire_2008.pdf||532.83 kB||Adobe PDF||Request a copy|
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