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High-quality InAs/InSb nanowire heterostructures grown by metal-organic vapor-phase epitaxy

Caroff, Philippe; Wagner, Jakob B; Dick, Kimberley A.; Nilsson, H; Jeppsson, Mattias; Deppert, Knut; Samuelson, Lars; Wallenberg, L Reine; Wernersson, Lars-Erik

Description

Planar growth of high-quality InAs/InSb heterostructure nanowires by metal-organic vapor-phase epitaxy was demonstrated. The nanowires are found to consists of two-segment structure with a narrow base diameter and a wide upper-segment diameter. The InAs crystal structures show a very low density of stacking faults and the interface of InAs and InSb is atomically sharp as the lattice-fringe separation to the interface changes at the interface. Point analysis of the InAs segment gives a 49.5 to...[Show more]

dc.contributor.authorCaroff, Philippe
dc.contributor.authorWagner, Jakob B
dc.contributor.authorDick, Kimberley A.
dc.contributor.authorNilsson, H
dc.contributor.authorJeppsson, Mattias
dc.contributor.authorDeppert, Knut
dc.contributor.authorSamuelson, Lars
dc.contributor.authorWallenberg, L Reine
dc.contributor.authorWernersson, Lars-Erik
dc.date.accessioned2015-12-13T22:54:39Z
dc.identifier.issn1613-6810
dc.identifier.urihttp://hdl.handle.net/1885/82194
dc.description.abstractPlanar growth of high-quality InAs/InSb heterostructure nanowires by metal-organic vapor-phase epitaxy was demonstrated. The nanowires are found to consists of two-segment structure with a narrow base diameter and a wide upper-segment diameter. The InAs crystal structures show a very low density of stacking faults and the interface of InAs and InSb is atomically sharp as the lattice-fringe separation to the interface changes at the interface. Point analysis of the InAs segment gives a 49.5 to 50.5 ratio (∓0.6) between indium and arsenic, with no trace of any other material. It is found that the difference in indium concentration in the particle from 30 to 67 atomic percent would lead to an increase of the particle diameter of 35%. The 40-nm-long InAs zinc blende segment is present below the InAs/InSb interface and is thus assumed to correspond to the gas-switching sequence from arsenic to TMSb.
dc.publisherWiley-VCH Verlag GMBH
dc.sourceSmall
dc.subjectKeywords: Arsenic; Communication channels (information theory); Concentration (process); Crystal growth; Electric wire; Epitaxial growth; Heterojunctions; Indium; Indium arsenide; Lead; Metallorganic vapor phase epitaxy; Metals; Molecular beam epitaxy; Nanostructur Heterostructures; Indium antimonide; MOCVD; Nanowires; TEM
dc.titleHigh-quality InAs/InSb nanowire heterostructures grown by metal-organic vapor-phase epitaxy
dc.typeJournal article
local.description.notesImported from ARIES
local.identifier.citationvolume4
dc.date.issued2008
local.identifier.absfor100706 - Nanofabrication, Growth and Self Assembly
local.identifier.absfor020406 - Surfaces and Structural Properties of Condensed Matter
local.identifier.ariespublicationf5625xPUB10470
local.type.statusPublished Version
local.contributor.affiliationCaroff, Philippe, College of Physical and Mathematical Sciences, ANU
local.contributor.affiliationWagner, Jakob B, Lund University
local.contributor.affiliationDick, Kimberley A., Lund University
local.contributor.affiliationNilsson, H, Lund University
local.contributor.affiliationJeppsson, Mattias, Lund University
local.contributor.affiliationDeppert, Knut, Lund University
local.contributor.affiliationSamuelson, Lars, Lund University
local.contributor.affiliationWallenberg, L Reine, Lund University
local.contributor.affiliationWernersson, Lars-Erik, Lund University
local.description.embargo2037-12-31
local.bibliographicCitation.issue7
local.bibliographicCitation.startpage878
local.bibliographicCitation.lastpage882
local.identifier.doi10.1002/smll.200700892
dc.date.updated2015-12-11T11:05:29Z
local.identifier.scopusID2-s2.0-48249130047
CollectionsANU Research Publications

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