High-quality InAs/InSb nanowire heterostructures grown by metal-organic vapor-phase epitaxy
Planar growth of high-quality InAs/InSb heterostructure nanowires by metal-organic vapor-phase epitaxy was demonstrated. The nanowires are found to consists of two-segment structure with a narrow base diameter and a wide upper-segment diameter. The InAs crystal structures show a very low density of stacking faults and the interface of InAs and InSb is atomically sharp as the lattice-fringe separation to the interface changes at the interface. Point analysis of the InAs segment gives a 49.5 to...[Show more]
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