Ruffell, Simon; Williams, James
Ion-implantation has been used to introduce oxygen concentration-depth profiles into nominally oxygen-free amorphous silicon (a-Si). The effect of O concentrations in excess of 1018 cm-3 on the formation of high pressure crystalline phases (Si-III and Si-XII) during indentation unloading has been studied. By examination of unloading curves and post-indent Raman microspectroscopy O is found to inhibit the so-called pop-out event during unloading and, therefore, the formation of the crystalline...[Show more]
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