Skip navigation
Skip navigation

Effect of oxygen on nanoscale indentation-induced phase transformations in amorphous silicon

Ruffell, Simon; Williams, James


Ion-implantation has been used to introduce oxygen concentration-depth profiles into nominally oxygen-free amorphous silicon (a-Si). The effect of O concentrations in excess of 1018 cm-3 on the formation of high pressure crystalline phases (Si-III and Si-XII) during indentation unloading has been studied. By examination of unloading curves and post-indent Raman microspectroscopy O is found to inhibit the so-called pop-out event during unloading and, therefore, the formation of the crystalline...[Show more]

CollectionsANU Research Publications
Date published: 2009
Type: Conference paper
Source: Materials Research Society Symposium Proceedings


File Description SizeFormat Image
01_Ruffell_Effect_of_oxygen_on_nanoscale_2009.pdf99.99 kBAdobe PDF    Request a copy

Items in Open Research are protected by copyright, with all rights reserved, unless otherwise indicated.

Updated:  22 January 2019/ Responsible Officer:  University Librarian/ Page Contact:  Library Systems & Web Coordinator