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Comparing InSb, InAs and InSb/InAs nanowire MOSFETs

Nilsson, H; Caroff, Philippe; Lind, Erik; Thelander, Claes; Wernersson, Lars-Erik

Description

Various channel materials are considered forth e III-V MOSFETs [1]. Among the III A/s, InSb has the highest mobility and the lowest effective mass. We may hence expect a large source injection velocity, but also parasitic leakage due to tunneling. Furthermore, the low density of states in the conduction band implies a small quantum capacitance. These effects may be studied in nanowire devices. So far, there are very few reports on detailed st udies o f transport in InSb nanowire MOSFETs [2],...[Show more]

dc.contributor.authorNilsson, H
dc.contributor.authorCaroff, Philippe
dc.contributor.authorLind, Erik
dc.contributor.authorThelander, Claes
dc.contributor.authorWernersson, Lars-Erik
dc.coverage.spatialUniversity Park, PA
dc.date.accessioned2015-12-13T22:53:20Z
dc.date.createdJune 22-24 2009
dc.identifier.isbn9781424435289
dc.identifier.urihttp://hdl.handle.net/1885/81762
dc.description.abstractVarious channel materials are considered forth e III-V MOSFETs [1]. Among the III A/s, InSb has the highest mobility and the lowest effective mass. We may hence expect a large source injection velocity, but also parasitic leakage due to tunneling. Furthermore, the low density of states in the conduction band implies a small quantum capacitance. These effects may be studied in nanowire devices. So far, there are very few reports on detailed st udies o f transport in InSb nanowire MOSFETs [2], and the possibility to form heterostructures has not been exploited. In this paper, we present detailed characterization of InSb nanowire MOSFETs that is combined with a comparison to InAs and InSb/lnAs nanowire MOSFETs formed on the same nanowire.
dc.publisherIEEE
dc.relation.ispartofseries67th Device Research Conference, DRC 2009
dc.sourceDevice Research Conference - Conference Digest, DRC
dc.subjectKeywords: Channel materials; Heterostructures; InAs; Injection velocity; InSb nanowire; Low density; MOSFETs; Nanowire devices; Nanowire MOSFETs; Parasitic leakages; Quantum capacitance; Electron mobility; Heterojunctions; Indium antimonides; MOSFET devices; Semico
dc.titleComparing InSb, InAs and InSb/InAs nanowire MOSFETs
dc.typeConference paper
local.description.notesImported from ARIES
local.description.refereedYes
dc.date.issued2009
local.identifier.absfor100706 - Nanofabrication, Growth and Self Assembly
local.identifier.absfor020406 - Surfaces and Structural Properties of Condensed Matter
local.identifier.ariespublicationf5625xPUB10065
local.type.statusPublished Version
local.contributor.affiliationNilsson, H, Lund University
local.contributor.affiliationCaroff, Philippe, College of Physical and Mathematical Sciences, ANU
local.contributor.affiliationLind, Erik, Lund University
local.contributor.affiliationThelander, Claes, Lund University
local.contributor.affiliationWernersson, Lars-Erik, Lund University
local.description.embargo2037-12-31
local.bibliographicCitation.startpage21
local.bibliographicCitation.lastpage22
local.identifier.doi10.1109/DRC.2009.5354844
dc.date.updated2016-02-24T08:34:59Z
local.identifier.scopusID2-s2.0-76549098523
CollectionsANU Research Publications

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