Skip navigation
Skip navigation

Comparing InSb, InAs and InSb/InAs nanowire MOSFETs

Nilsson, H; Caroff, Philippe; Lind, Erik; Thelander, Claes; Wernersson, Lars-Erik


Various channel materials are considered forth e III-V MOSFETs [1]. Among the III A/s, InSb has the highest mobility and the lowest effective mass. We may hence expect a large source injection velocity, but also parasitic leakage due to tunneling. Furthermore, the low density of states in the conduction band implies a small quantum capacitance. These effects may be studied in nanowire devices. So far, there are very few reports on detailed st udies o f transport in InSb nanowire MOSFETs [2],...[Show more]

CollectionsANU Research Publications
Date published: 2009
Type: Conference paper
Source: Device Research Conference - Conference Digest, DRC
DOI: 10.1109/DRC.2009.5354844


File Description SizeFormat Image
01_Nilsson_Comparing_InSb,_InAs_and_2009.pdf323.2 kBAdobe PDF    Request a copy

Items in Open Research are protected by copyright, with all rights reserved, unless otherwise indicated.

Updated:  19 May 2020/ Responsible Officer:  University Librarian/ Page Contact:  Library Systems & Web Coordinator