Nilsson, H; Caroff, Philippe; Lind, Erik; Thelander, Claes; Wernersson, Lars-Erik
Various channel materials are considered forth e III-V MOSFETs . Among the III A/s, InSb has the highest mobility and the lowest effective mass. We may hence expect a large source injection velocity, but also parasitic leakage due to tunneling. Furthermore, the low density of states in the conduction band implies a small quantum capacitance. These effects may be studied in nanowire devices. So far, there are very few reports on detailed st udies o f transport in InSb nanowire MOSFETs ,...[Show more]
Items in Open Research are protected by copyright, with all rights reserved, unless otherwise indicated.