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A model of electrical isolation in GaN and ZnO bombarded with light ions

Titov, A I; Karasev, P; Kucheyev, Sergei

Description

A model of a decrease in electrical conductivity of GaN and ZnO under the effect of irradiation with fast ions is suggested. The formation of complexes composed of a doping-impurity atom and the simplest defect formed by the ion beam is considered as the

CollectionsANU Research Publications
Date published: 2004
Type: Journal article
URI: http://hdl.handle.net/1885/81600
Source: Semiconductors
DOI: 10.1134/1.1808825

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