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Vertical "iII-V" V-shaped nanomembranes epitaxially grown on a patterned Si[001] substrate and their enhanced light scattering

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Conesa-Boj, Sonia; Russo-Averchi, E.; Dalmau-Malloriqui, A; Trevino, Jacob; Pecora, Emanuele F; Forestiere, Carlo; Handin, Alex; Ek, Martin; Zweifel, Ludovit; Wallenberg, L Reine; Ruffer, D; Heiss, M.; Troadec, David; Dal Negro, Luca; Caroff, Philippe; Fontcuberta i Morral, Anna

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We report on a new form of III-V compound semiconductor nanostructures growing epitaxially as vertical V-shaped nanomembranes on Si(001) and study their light-scattering properties. Precise position control of the InAs nanostructures in regular arrays is

dc.contributor.authorConesa-Boj, Sonia
dc.contributor.authorRusso-Averchi, E.
dc.contributor.authorDalmau-Malloriqui, A
dc.contributor.authorTrevino, Jacob
dc.contributor.authorPecora, Emanuele F
dc.contributor.authorForestiere, Carlo
dc.contributor.authorHandin, Alex
dc.contributor.authorEk, Martin
dc.contributor.authorZweifel, Ludovit
dc.contributor.authorWallenberg, L Reine
dc.contributor.authorRuffer, D
dc.contributor.authorHeiss, M.
dc.contributor.authorTroadec, David
dc.contributor.authorDal Negro, Luca
dc.contributor.authorCaroff, Philippe
dc.contributor.authorFontcuberta i Morral, Anna
dc.date.accessioned2015-12-13T22:52:27Z
dc.identifier.issn1936-0851
dc.identifier.urihttp://hdl.handle.net/1885/81580
dc.description.abstractWe report on a new form of III-V compound semiconductor nanostructures growing epitaxially as vertical V-shaped nanomembranes on Si(001) and study their light-scattering properties. Precise position control of the InAs nanostructures in regular arrays is
dc.publisherAmerican Chemical Society
dc.sourceACS Nano
dc.subjectKeywords: Epitaxially grown; III-V compound semiconductor; InAs; Nano-scale aperture; Nanomembranes; New forms; Precise position; Regular array; Si(0 0 1); V-shape; Epitaxial growth; Indium arsenide; Light scattering; Molecular beam epitaxy; Nucleation; Silicon; Na III-V nanostructures; light scattering; nanomembranes; nucleation; V-shape
dc.titleVertical "iII-V" V-shaped nanomembranes epitaxially grown on a patterned Si[001] substrate and their enhanced light scattering
dc.typeJournal article
local.description.notesImported from ARIES
local.identifier.citationvolume6
dc.date.issued2012
local.identifier.absfor100706 - Nanofabrication, Growth and Self Assembly
local.identifier.absfor020406 - Surfaces and Structural Properties of Condensed Matter
local.identifier.ariespublicationf5625xPUB9863
local.type.statusPublished Version
local.contributor.affiliationConesa-Boj, Sonia, Ecole Polytechnique Fédérale de Lausanne
local.contributor.affiliationRusso-Averchi, E., Ecole Polytechnique Fédérale de Lausanne
local.contributor.affiliationDalmau-Malloriqui, A, Ecole Polytechnique Federale de Lausanne
local.contributor.affiliationTrevino, Jacob, Boston University
local.contributor.affiliationPecora, Emanuele F, Boston University
local.contributor.affiliationForestiere, Carlo, Boston University
local.contributor.affiliationHandin, Alex, Boston University
local.contributor.affiliationEk, Martin, Lund University
local.contributor.affiliationZweifel, Ludovit, Ecole Polytechnique Fédérale de Lausanne
local.contributor.affiliationWallenberg, L Reine, Lund University
local.contributor.affiliationRuffer, D, Ecole Polytechnique Federale de Lausanne
local.contributor.affiliationHeiss, M., Ecole Polytechnique Fédérale de Lausanne
local.contributor.affiliationTroadec, David, Lund University
local.contributor.affiliationDal Negro, Luca, Boston University
local.contributor.affiliationCaroff, Philippe, College of Physical and Mathematical Sciences, ANU
local.contributor.affiliationFontcuberta i Morral, Anna, Ecole Polytechnique Fédérale de Lausanne
local.description.embargo2037-12-31
local.bibliographicCitation.issue12
local.bibliographicCitation.startpage10982
local.bibliographicCitation.lastpage10991
local.identifier.doi10.1021/nn304526k
dc.date.updated2016-02-24T09:46:32Z
local.identifier.scopusID2-s2.0-84871591984
CollectionsANU Research Publications

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