Defect Acceptor and Donor in Ion-Bombarded GaN
We have employed synchrotron-based core level photoemission measurements and near-edge x-ray absorption fine structure spectroscopy to identify and characterize nitrogen interstitials in p -type GaN, created by nitrogen bombardment. From absorption measurements around the nitrogen K edge we have identified nitrogen interstitial levels within the band gap, in good agreement with theoretical predictions. The reduction in band bending determined from photoemission measurements was explained by the...[Show more]
|Collections||ANU Research Publications|
|Source:||Journal of Vacuum Science and Technology A|
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