Defect Acceptor and Donor in Ion-Bombarded GaN
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Petravic, Mladen; Coleman, Victoria A; Kim, K J; Kim, Bongsoo; Li, Gang
Description
We have employed synchrotron-based core level photoemission measurements and near-edge x-ray absorption fine structure spectroscopy to identify and characterize nitrogen interstitials in p -type GaN, created by nitrogen bombardment. From absorption measurements around the nitrogen K edge we have identified nitrogen interstitial levels within the band gap, in good agreement with theoretical predictions. The reduction in band bending determined from photoemission measurements was explained by the...[Show more]
Collections | ANU Research Publications |
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Date published: | 2005 |
Type: | Journal article |
URI: | http://hdl.handle.net/1885/81544 |
Source: | Journal of Vacuum Science and Technology A |
DOI: | 10.1116/1.1991869 |
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