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Defect Acceptor and Donor in Ion-Bombarded GaN

Petravic, Mladen; Coleman, Victoria A; Kim, K J; Kim, Bongsoo; Li, Gang


We have employed synchrotron-based core level photoemission measurements and near-edge x-ray absorption fine structure spectroscopy to identify and characterize nitrogen interstitials in p -type GaN, created by nitrogen bombardment. From absorption measurements around the nitrogen K edge we have identified nitrogen interstitial levels within the band gap, in good agreement with theoretical predictions. The reduction in band bending determined from photoemission measurements was explained by the...[Show more]

CollectionsANU Research Publications
Date published: 2005
Type: Journal article
Source: Journal of Vacuum Science and Technology A
DOI: 10.1116/1.1991869


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