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Thermal Stability of Ion-Implanted ZnO

Coleman, Victoria A; Tan, Hoe Hark; Jagadish, Chennupati; Kucheyev, Sergei O; Zou, Jin

Description

Zinc oxide single crystals implanted at room temperature with high-dose (1.4× 1017 cm-2) 300 keV As+ ions are annealed at 1000-1200 °C. Damage recovery is studied by a combination of Rutherford backscattering/channeling spectrometry (RBS/C), cross-secti

CollectionsANU Research Publications
Date published: 2005
Type: Journal article
URI: http://hdl.handle.net/1885/81415
Source: Applied Physics Letters
DOI: 10.1063/1.2140481

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