Thermal Stability of Ion-Implanted ZnO
Zinc oxide single crystals implanted at room temperature with high-dose (1.4× 1017 cm-2) 300 keV As+ ions are annealed at 1000-1200 °C. Damage recovery is studied by a combination of Rutherford backscattering/channeling spectrometry (RBS/C), cross-secti
|Collections||ANU Research Publications|
|Source:||Applied Physics Letters|
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