Minority carrier lifetime in plasma-textured silicon wafers for solar cells
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Kumaravelu, G; Alkaisi, M M; MacDonald, Daniel; Zhao, J; Rong, B; Bittar, A
Description
In this work a comparison between plasma-induced defects by two different SF6 texturing techniques, reactive ion etching (RIE) and high-density plasma (HDP) is presented. It is found that without any defect-removal etching (DRE), the minority carrier lifetime is the highest for the HDP technique. After DRE, the minority carrier lifetime rises as high as 750 μs for both RIE- and HDP-textured wafers at an excess carrier density of 1×1015 cm-3. The measured lifetimes correspond to an implied...[Show more]
dc.contributor.author | Kumaravelu, G | |
---|---|---|
dc.contributor.author | Alkaisi, M M | |
dc.contributor.author | MacDonald, Daniel | |
dc.contributor.author | Zhao, J | |
dc.contributor.author | Rong, B | |
dc.contributor.author | Bittar, A | |
dc.date.accessioned | 2015-12-13T22:51:55Z | |
dc.identifier.issn | 0927-0248 | |
dc.identifier.uri | http://hdl.handle.net/1885/81307 | |
dc.description.abstract | In this work a comparison between plasma-induced defects by two different SF6 texturing techniques, reactive ion etching (RIE) and high-density plasma (HDP) is presented. It is found that without any defect-removal etching (DRE), the minority carrier lifetime is the highest for the HDP technique. After DRE, the minority carrier lifetime rises as high as 750 μs for both RIE- and HDP-textured wafers at an excess carrier density of 1×1015 cm-3. The measured lifetimes correspond to an implied one-sun open-circuit voltage of around 680 mV compared to about 640 mV before DRE for the HDP-textured wafers. FZ silicon 〈1 0 0〉 wafers were used in this study. We also noted that in the RIE process, the induced defect density was significantly lower for wafers etched at 300 K than those etched at 173 K. | |
dc.publisher | Elsevier | |
dc.source | Solar Energy Materials and Solar Cells | |
dc.subject | Keywords: Carrier concentration; Defects; Electric potential; Reactive ion etching; Silicon wafers; Textures; Defect-removal etching (DRE); Minority carrier lifetime; Open-circuit voltages; Surface texturing; Silicon solar cells Minority carrier lifetime; Reactive ion etching; Silicon solar cell; Surface texturing | |
dc.title | Minority carrier lifetime in plasma-textured silicon wafers for solar cells | |
dc.type | Journal article | |
local.description.notes | Imported from ARIES | |
local.description.refereed | Yes | |
local.identifier.citationvolume | 87 | |
dc.date.issued | 2005 | |
local.identifier.absfor | 090699 - Electrical and Electronic Engineering not elsewhere classified | |
local.identifier.ariespublication | MigratedxPub9628 | |
local.type.status | Published Version | |
local.contributor.affiliation | Kumaravelu, G, University of Canterbury | |
local.contributor.affiliation | Alkaisi, M M, University of Canterbury | |
local.contributor.affiliation | MacDonald, Daniel, College of Engineering and Computer Science, ANU | |
local.contributor.affiliation | Zhao, J, University of New South Wales | |
local.contributor.affiliation | Rong, B, Delft University of Technology | |
local.contributor.affiliation | Bittar, A, University of New South Wales | |
local.description.embargo | 2037-12-31 | |
local.bibliographicCitation.issue | 1-4 | |
local.bibliographicCitation.startpage | 99 | |
local.bibliographicCitation.lastpage | 106 | |
local.identifier.doi | 10.1016/j.solmat.2004.07.015 | |
dc.date.updated | 2015-12-11T10:47:50Z | |
local.identifier.scopusID | 2-s2.0-17644404399 | |
Collections | ANU Research Publications |
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