Minority Carrier Lifetime Properties of Reactive Ion Etched p-Type Float Zone Si
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Deenapanray, Prakash; Horteis, M; MacDonald, Daniel; Weber, Klaus
Description
Quasi-steady-state photoconductance (QSSPC) and deep level transient spectroscopy (DLTS) were used to characterize the minority carrier lifetime properties of reactive ion etched p-type Si. The effective lifetime of the plasma-processed samples degraded after etching, with the densities of recombination centers increasing linearly with etch time. Evidence is provided for the long-range (> 2 μm) migration of defects in the plasma-etched samples. A discrete defect with energy position at (0.32 ±...[Show more]
Collections | ANU Research Publications |
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Date published: | 2005 |
Type: | Journal article |
URI: | http://hdl.handle.net/1885/81306 |
Source: | Electrochemical and Solid-State Letters |
DOI: | 10.1149/1.1854116 |
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01_Deenapanray_Minority_Carrier_Lifetime_2005.pdf | 99.05 kB | Adobe PDF | Request a copy |
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