Minority Carrier Lifetime Properties of Reactive Ion Etched p-Type Float Zone Si
Quasi-steady-state photoconductance (QSSPC) and deep level transient spectroscopy (DLTS) were used to characterize the minority carrier lifetime properties of reactive ion etched p-type Si. The effective lifetime of the plasma-processed samples degraded after etching, with the densities of recombination centers increasing linearly with etch time. Evidence is provided for the long-range (> 2 μm) migration of defects in the plasma-etched samples. A discrete defect with energy position at (0.32 ±...[Show more]
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|Source:||Electrochemical and Solid-State Letters|
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