Skip navigation
Skip navigation

Electronic passivation of silicon surfaces by thin films of atomic layer deposited gallium oxide

Allen, T. G.; Cuevas, A.


This paper proposes the application of gallium oxide (Ga₂O₃) thin films to crystalline silicon solar cells. Effective passivation of n- and p-type crystalline silicon surfaces has been achieved by the application of very thin Ga₂O₃ films prepared by atomic layer deposition using trimethylgallium (TMGa) and ozone (O₃) as the reactants. Surface recombination velocities as low as 6.1 cm/s have been recorded with films less than 4.5 nm thick. A range of deposition parameters has been explored, with...[Show more]

CollectionsANU Research Publications
Date published: 2014-07-21
Type: Journal article
Source: Applied Physics Letters
DOI: 10.1063/1.4890737


File Description SizeFormat Image
01_Allen_Electronic_passivation_of_2014.pdfPublished Version838.14 kBAdobe PDFThumbnail

Items in Open Research are protected by copyright, with all rights reserved, unless otherwise indicated.

Updated:  20 July 2017/ Responsible Officer:  University Librarian/ Page Contact:  Library Systems & Web Coordinator