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A brief review of doping issues in III-V semiconductors

Jones, K S; Lind, A. G.; Hatem, C.; Moffatt, S.; Ridgway, Mark C

Description

A brief review of n-type doping of GaAs, InGaAs and InP using ion implantation is presented. While the diffusion of the amphoteric dopant Si is not a significant issue its activation is limited to around 1×10 19/cm3. This has prompted many studies into f

CollectionsANU Research Publications
Date published: 2013
Type: Conference paper
URI: http://hdl.handle.net/1885/81173
Source: ECS Transactions
DOI: 10.1149/05303.0097ecst

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